General Study of MXenes as a catalyst and as a transistor

General Study of MXenes as a catalyst and as a transistor

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We have investigated the performances of MXenes as catalysts and transistors. To evaluate the excellence of MXene-based-catalyst, free energies and exchange currents were compared. We found Ti3C2O2 is the best MXenes for HER, followed by Ti4C3O2. MXene transistors are modelled by DFT and transport simulation was proceeded by NEGF-Poisson self-consistent simulation in the mode space, under ballistic condition. MXene transistors were less sensitive to the scaling down of the devices, when compared by BP. Ti2CO2, Zr2CO2 and Hf2CO2 AD-6nm-nFETs show sub-threshold swing of 60 mV/dec while AD-6nm-BP exhibits 261 mV/dec because they have higher effective masses of electrons, meaning less direct-tunneling occurs under off-region. Among of them, Both 10-nm Zr2CO2 nFET and pFET exhibit isotropic transport with the on-state current over 2350 μA/μm, Channel capacitance over 7 μF/cm2 and swing under 68mV/dec, meeting all requirements of 2021 of ITRS-2017. We strongly suggest Zr2CO2 FET is the one of the promising candidate of future logic devices.
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19. 7. 4 오후 1:56
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We have investigated the performances of MXenes as catalysts and transistors. To evaluate the excellence of MXene-based-catalyst, free energies and exchange currents were compared. We found Ti3C2O2 is the best MXenes for HER, followed by Ti4C3O2. MXene transistors are modelled by DFT and transport simulation was proceeded by NEGF-Poisson self-consistent simulation in the mode space, under ballistic condition. MXene transistors were less sensitive to the scaling down of the devices, when compared by BP. Ti2CO2, Zr2CO2 and Hf2CO2 AD-6nm-nFETs show sub-threshold swing of 60 mV/dec while AD-6nm-BP exhibits 261 mV/dec because they have higher effective masses of electrons, meaning less direct-tunneling occurs under off-region. Among of them, Both 10-nm Zr2CO2 nFET and pFET exhibit isotropic transport with the on-state current over 2350 μA/μm, Channel capacitance over 7 μF/cm2 and swing under 68mV/dec, meeting all requirements of 2021 of ITRS-2017. We strongly suggest Zr2CO2 FET is the one of the promising candidate of future logic devices.
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